The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Feb. 13, 2009
Hee-soo Kang, Yongin-si, KR;
Byung-kyu Cho, Seoul, KR;
Choong-ho Lee, Yongin-si, KR;
Dong-uk Choi, Seongnam-si, KR;
Hee-Soo Kang, Yongin-si, KR;
Byung-Kyu Cho, Seoul, KR;
Choong-Ho Lee, Yongin-si, KR;
Dong-Uk Choi, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device, including forming a plurality of gate structures on a substrate, the gate structures each including a hard mask pattern stacked on a gate conductive pattern, forming an insulating layer pattern between the gate structures at least partially exposing a top surface of the hard mask pattern, forming a trench that exposes at least a top surface of the gate conductive pattern by selectively removing the hard mask pattern, and forming a silicide layer on the exposed gate conductive pattern.