The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2011

Filed:

Jun. 16, 2008
Applicants:

Dimitre Zahariev Dimitrov, Hsinchu, TW;

Chien-rong Huang, Hsinchu, TW;

Ching-hsi Lin, Hsinchu, TW;

Inventors:

Dimitre Zahariev Dimitrov, Hsinchu, TW;

Chien-Rong Huang, Hsinchu, TW;

Ching-Hsi Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and HOso as to form a nano-texturized silicon substrate.


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