The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
May. 12, 2009
Adele Tamboli, Pasadena, CA (US);
Evelyn Lynn HU, Cambridge, CA (US);
Mathew C. Schmidt, Santa Barbara, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Adele Tamboli, Pasadena, CA (US);
Evelyn Lynn Hu, Cambridge, CA (US);
Mathew C. Schmidt, Santa Barbara, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.