The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Mar. 19, 2009
Applicant:
Se-jin Chung, Yongin-si, KR;
Inventor:
Se-Jin Chung, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.
Quick Actions:
Chung, Se-Jin. (2011). Mask for silicon crystallization, method of forming poly-silicon thin film, and manufacturing method of thin film transistor (U.S. Patent No. 8052790). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8052790
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