The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Jul. 21, 2006
Masahiro Nakanishi, Kyoto, JP;
Tetsushi Kasahara, Osaka, JP;
Tomoaki Izumi, Osaka, JP;
Kiminori Matsuno, Osaka, JP;
Daisuke Kunimune, Osaka, JP;
Kazuaki Tamura, Osaka, JP;
Yoshiyuki Konishi, Kyoto, JP;
Masahiro Nakanishi, Kyoto, JP;
Tetsushi Kasahara, Osaka, JP;
Tomoaki Izumi, Osaka, JP;
Kiminori Matsuno, Osaka, JP;
Daisuke Kunimune, Osaka, JP;
Kazuaki Tamura, Osaka, JP;
Yoshiyuki Konishi, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
For address management of a nonvolatile memory, the whole logical address space is divided into logical address ranges (0 to 15), and the physical address space is divided into physical areas (segments (0 to 15)). The logical address ranges are respectively associated with the physical areas (segments) to manage the addresses. The sizes of the logical address ranges are equalized. The size of the physical area (segment (0)) corresponding to the logical address range (0) in which data of high rewrite frequency such as an FAT is expected to be stored is larger than those of the other physical areas, and the logical address ranges and the physical areas are allocated. Alternatively, the sizes of the physical areas are equalized, and the size of the logical address range (0) is set as a smaller one than those of the other logical address ranges. With this, the actual rewrite frequencies of the physical areas (segments) are equal to one another, and consequently the life of the nonvolatile memory can be prolonged.