The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Jun. 03, 2008
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Koshi Tamamura, Tokyo, JP;
Kunihiko Tasai, Kanagawa, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Hitoshi Nakamura, Tokyo, JP;
Sumiko Fujisaki, Tokyo, JP;
Takeshi Kikawa, Tokyo, JP;
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Koshi Tamamura, Tokyo, JP;
Kunihiko Tasai, Kanagawa, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Hitoshi Nakamura, Tokyo, JP;
Sumiko Fujisaki, Tokyo, JP;
Takeshi Kikawa, Tokyo, JP;
Abstract
A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including BeMgZnTe (0<x1<1, 0≦x2<1, 0<x3<1, x1+x2+x3=1) and a second semiconductor layer mainly including BeMgZnTe (0<x4<1, 0<x5<1, 0≦x6<1, x4+x5+x6=1).