The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Mar. 05, 2008
G. R. Mohan Rao, McKinney, TX (US);
G. R. Mohan Rao, McKinney, TX (US);
S. Aqua Semiconductor LLC, Wilmington, DE (US);
Abstract
Random access memory with CMOS-compatible nonvolatile storage element in series with storage capacitor is described herein. Embodiments may include memory devices and systems that have plurality of row lines, column lines, and memory cells each of which comprising an access transistor, a storage capacitor and a CMOS-compatible non-volatile storage element connected in series. The CMOS-compatible non-volatile storage element may store charges corresponding to a binary value. The node located between the CMOS-compatible non-volatile storage element and the storage capacitor may be defined as a storage node. During read operation, a cell may be selected, and the voltage at the storage node of the cell may be sensed at the corresponding column line, and the binary value may be determined based on at least the sensed voltage.