The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Feb. 13, 2008
Hiromichi Kuno, Nishikamo-gun, JP;
Satoshi Hirose, Nishikamo-gun, JP;
Naoyoshi Takamatsu, Susono, JP;
Hiroya Tsuji, Yokkaichi, JP;
Hiroyuki Sakakibara, Hekinan, JP;
Kazuki Fukatsu, Anjo, JP;
Hiromichi Kuno, Nishikamo-gun, JP;
Satoshi Hirose, Nishikamo-gun, JP;
Naoyoshi Takamatsu, Susono, JP;
Hiroya Tsuji, Yokkaichi, JP;
Hiroyuki Sakakibara, Hekinan, JP;
Kazuki Fukatsu, Anjo, JP;
Toyota Jidosha Kabushiki Kaisha, Aichi-Ken, JP;
Denso Corporation, Aichi-Ken, JP;
Nippon Soken, Inc., Aichi-Ken, JP;
Abstract
A surge voltage target setting unit obtains a main circuit power supply voltage of a semiconductor power conversion device based on an inter-terminal voltage of a semiconductor switching element detected by a voltage detection unit, and sets a control target of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit, when the semiconductor switching element is turned off, sets a quantity of voltage modification so as to modify a gate voltage in a direction raising the gate voltage, that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage, when the inter-terminal voltage exceeds the control target.