The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Feb. 15, 2009
Wei-chieh Lin, Hsinchu, TW;
Ho-tai Chen, Taipei County, TW;
Li-cheng Lin, Taipei, TW;
Jen-hao Yeh, Kaohsiung County, TW;
Hsin-yen Chiu, Taichung County, TW;
Hsin-yu Hsu, Chiayi County, TW;
Shih-chieh Hung, Changhua County, TW;
Wei-Chieh Lin, Hsinchu, TW;
Ho-Tai Chen, Taipei County, TW;
Li-Cheng Lin, Taipei, TW;
Jen-Hao Yeh, Kaohsiung County, TW;
Hsin-Yen Chiu, Taichung County, TW;
Hsin-Yu Hsu, Chiayi County, TW;
Shih-Chieh Hung, Changhua County, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant, a second trench structure including a gate oxide layer formed around a second trench with poly-Si implant, a p-base region formed between the first trench structure and the second trench structure, a plurality of n+ source region formed on the p-base region and between the first trench structure and the second trench structure, a dielectric layer formed on the first trench structure, the second trench structure, and the plurality of n+ source region. The frontside metal layer is formed on the semiconductor layer and filling gaps formed between the plurality of n+ source region on the p-base region.