The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Oct. 25, 2007
Miwako Akiyama, Hachioji, JP;
Akio Nakagawa, Chigasaki, JP;
Yusuke Kawaguchi, Miura-gun, JP;
Syotaro Ono, Yokohama, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Miwako Akiyama, Hachioji, JP;
Akio Nakagawa, Chigasaki, JP;
Yusuke Kawaguchi, Miura-gun, JP;
Syotaro Ono, Yokohama, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
This semiconductor device an epitaxial layer of a first conductivity type formed on a surface of the first semiconductor layer, and a base layer of a second conductivity type formed on a surface of the epitaxial layer. A diffusion layer of a first conductivity type is selectively formed in the base layer, and a trench penetrates the base layer to reach the epitaxial layer. A gate electrode is formed in the trench through the gate insulator film formed on the inner wall of the trench. A first buried diffusion layer of a second conductivity type is formed in the epitaxial layer deeper than the bottom of the gate electrode. A second buried diffusion layer connects the first buried diffusion layer and the base layer and has a resistance higher than that of the first buried diffusion layer.