The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Mar. 29, 2010
Applicants:
Kwon Hong, Ichon-shi, KR;
Kwan-yong Lim, Ichon-shi, KR;
Inventors:
Kwon Hong, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.