The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Jul. 13, 2010
Applicants:

Jin-ywan Lin, Hsinchu, TW;

Jen-chau Wu, Hsinchu, TW;

Chih-chiang LU, Hsinchu, TW;

Wei-chih Peng, Hsinchu, TW;

Ching-pu Tai, Hsinchu, TW;

Shih-i Chen, Hsinchu, TW;

Inventors:

Jin-Ywan Lin, Hsinchu, TW;

Jen-Chau Wu, Hsinchu, TW;

Chih-Chiang Lu, Hsinchu, TW;

Wei-Chih Peng, Hsinchu, TW;

Ching-Pu Tai, Hsinchu, TW;

Shih-I Chen, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.


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