The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Mar. 23, 2007
Hisayuki Miki, Chiba, JP;
Hiromitsu Sakai, Chiba, JP;
Hisayuki Miki, Chiba, JP;
Hiromitsu Sakai, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layercomposed of a high concentration layermade of a group III nitride semiconductor containing high concentration of impurity atoms, and a low concentration layermade of a group III nitride semiconductor containing impurity atoms whose concentration is lower than that of the high concentration layer; and a group III nitride semiconductor layer, and the lower concentration layerand the high concentration layerare continuously formed on the group III nitride semiconductor layerin this order to form the group III nitride semiconductor light emitting device.