The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Nov. 19, 2007
Ji-yong Park, Suwon-si, KR;
Ul-ho Lee, Yongin-si, KR;
Jae-bon Koo, Yongin-si, KR;
Ki-yong Lee, Yongin-si, KR;
Hye-hyang Park, Suwon-si, KR;
Ji-Yong Park, Suwon-si, KR;
Ul-Ho Lee, Yongin-si, KR;
Jae-Bon Koo, Yongin-si, KR;
Ki-Yong Lee, Yongin-si, KR;
Hye-Hyang Park, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Yongin, KR;
Abstract
The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.