The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Feb. 18, 2008
Semiconductor memory device having variable resistance element and method for manufacturing the same
Kimihiko Ito, Tokyo, JP;
Kimihiko Ito, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a first region made of a variable resistance material whose resistivity changes by applying voltage, and a second region formed by doping a metal element to the variable resistance material such that a resistivity of the second region is higher than that of the first region and is not changed by applying a voltage used to change the resistivity of the first region. The first region is in contact with the first electrode and the second electrode, and extends from one electrode side to the other electrode side. The second region is provided outside the first region in at least part of the current path forming region in direction extending from one electrode side to the other electrode side.