The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Jul. 08, 2008
Yong Seok Eun, Ichon-si, KR;
Su Jin Chae, Ichon-si, KR;
Keum-bum Lee, Ichon-si, KR;
Heon-yong Chang, Ichon-si, KR;
Min-yong Lee, Ichon-si, KR;
Yong Seok Eun, Ichon-si, KR;
Su Jin Chae, Ichon-si, KR;
Keum-Bum Lee, Ichon-si, KR;
Heon-Yong Chang, Ichon-si, KR;
Min-Yong Lee, Ichon-si, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A phase change memory device and a method for manufacturing the same. The method includes the steps of defining bottom electrode contact holes by removing portions of an insulation layer, to expose bottom electrodes, on a semiconductor substrate on which the bottom electrodes and the insulation layer are sequentially formed; forming amorphous silicon spacers on inner sidewalls of the bottom electrode contact holes; and forming bottom electrode contacts in the bottom electrode contact holes.