The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Sep. 29, 2005
Akira Terakawa, Nara, JP;
Akira Terakawa, Nara, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In the photovoltaic devices comprising a substantially intrinsic amorphous silicon layer containing hydrogen between an n-type single-crystal silicon substrate and a p-type amorphous silicon layer containing hydrogen, the photovoltaic device according to the present invention comprises a trap layer that contains less hydrogen than the intrinsic amorphous silicon layer between the p-type amorphous silicon layer and the intrinsic amorphous silicon layer. The trap layer reduces hydrogen diffusion from the intrinsic amorphous silicon layer to the p-type amorphous silicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile