The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Sep. 10, 2010
Claire Fenouillet-béranger, Saint Martin d'Hères, FR;
Philippe Coronel, Barraux, FR;
Claire Fenouillet-Béranger, Saint Martin d'Hères, FR;
Philippe Coronel, Barraux, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A gate dielectric, an insulating layer and an etching mask are formed on substrate. The etching mask delineates at least the gate electrode and the source and drain contacts and the source, drain and gate output lines of the first metal level of a field effect device. The gate electrode and the future source and drain contacts are formed simultaneously by etching of the insulating layer. A gate material is deposited to form the gate electrode. The source and drain contacts are formed at least in the insulating layer. The source, drain and gate output lines of the first metal level are formed in the etching mask.