The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Mar. 18, 2009
Applicants:
Mikio Fujiwara, Tokyo, JP;
Masahide Sasaki, Tokyo, JP;
Hiroshi Matsuo, Tokyo, JP;
Hirohisa Nagata, Kanagawa, JP;
Inventors:
Mikio Fujiwara, Tokyo, JP;
Masahide Sasaki, Tokyo, JP;
Hiroshi Matsuo, Tokyo, JP;
Hirohisa Nagata, Kanagawa, JP;
Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for reducing low frequency noise of a transistor operable at cryogenic temperatures includes a first step in which the transistor is illuminated with a light in a state that the transistor is activated and flowed current by supplying a power at a predetermined temperature, and a second step in which the transistor is operated at the predetermined temperature after the illumination of the light.