The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Oct. 14, 2010
Applicants:

Osman Ghandour, Morgan Hill, CA (US);

Alex Austin, Carmel Valley, CA (US);

Daebong Lee, Sunnyvale, CA (US);

Jason Stephen Corneille, San Jose, CA (US);

James Teixeira, San Jose, CA (US);

Inventors:

Osman Ghandour, Morgan Hill, CA (US);

Alex Austin, Carmel Valley, CA (US);

Daebong Lee, Sunnyvale, CA (US);

Jason Stephen Corneille, San Jose, CA (US);

James Teixeira, San Jose, CA (US);

Assignee:

Miasole, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In one embodiment, material including an absorber layer is scribed using an infrared laser source and a picosecond pulse width.


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