The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Feb. 05, 2009
Youngkyn Noh, Daejeon, KR;
Jae-eung OH, Kyunggy, KR;
Youngkyn Noh, Daejeon, KR;
Jae-Eung Oh, Kyunggy, KR;
Wooree Lst Co. Ltd, , KR;
Abstract
The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating the nitride semiconductor light emitting device using the hybrid buffer layer includes a first step of forming an AlGaN(0≦x<1) layer on a substrate, a second step of forming a three-dimensional crystal seed layer made of a material included in a general formula of AlGaN(0≦x<1) and AlONon the substrate by recrystallizing the substrate with the AlGaN(0≦x<1) layer thereon, and a third step of forming an AlN nanostructure by annealing the substrate subjected to the second step at NHgas atmosphere, thus forming a hybrid buffer layer composed of the three-dimensional crystal seed layer and the AlN nanostructure on the substrate.