The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Dec. 12, 2005
Morio Yumura, Tsukuba, JP;
Satoshi Ohshima, Abiko, JP;
Junzo Yana, Yokohama, JP;
Kaori Fukuma, Fukuoka, JP;
Morio Yumura, Tsukuba, JP;
Satoshi Ohshima, Abiko, JP;
Junzo Yana, Yokohama, JP;
Kaori Fukuma, Fukuoka, JP;
Nikkiso Company Limited, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
The objective of the present invention is to provide a process of producing single-walled carbon nanotubes, capable of producing single-walled carbon nanotubes with high purity. A process of producing single-walled carbon nanotubes according to the present invention includes feeding a feedstock including a hydrocarbon source, a metallocene, and a sulfur compound in a state of mist to a feeding zone where hydrogen gas flows at a linear velocity of 1-50 m/second wherein the amount of the hydrocarbon source is 0.01-0.2% by mass and the amount of the metallocene is 0.001-0.2% by mass based on the total amount of the hydrogen gas and the feedstock, and the amount by mass of the sulfur compound is ⅛-4 times as much as that of the metallocene; and making the hydrogen gas and the fed feedstock flow through a reaction zone with a temperature of 800-1000° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile