The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8048250 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 01, 2011

Filed:

May. 06, 2009
Applicants:

Mark A. Raymond, Littleton, CO (US);

Howard G. Lange, Mount Prospect, IL (US);

Seth Weiss, Cherry Hills, CO (US);

Inventors:

Mark A. Raymond, Littleton, CO (US);

Howard G. Lange, Mount Prospect, IL (US);

Seth Weiss, Cherry Hills, CO (US);

Assignee:

Genie Lens Technologies, LLC, Englewood, CO (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29C 59/04 (2006.01); H01L 31/042 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a photovoltaic (PV) enhancement film. The method includes providing an extrusion device with an embossing roller engraved to have a pattern corresponding to a set of absorption enhancement structures. The method includes feeding a web of substantially transparent material, such as an UV-stabilized blend of polycarbonate or acrylic. The method includes rolling the embossing roller against a first side of the web to form the absorption enhancement structures. The absorption enhancement structures each include a light receiving surface that directs at least a portion of light that passes through a second side of the web toward the first side back toward the second side (e.g., the structures may be configured to provide total internal reflection when applied to a PV device). The structures refract incident light to provide an average path length ratio of greater than about 1.10 in the PV device.


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