The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Dec. 22, 2008
Kosei Ueno, Hokkaido, JP;
Hiroaki Misawa, Hokkaido, JP;
Dai Ohnishi, Kyoto, JP;
Takui Sakaguchi, Kyoto, JP;
Yoichi Mugino, Kyoto, JP;
Kosei Ueno, Hokkaido, JP;
Hiroaki Misawa, Hokkaido, JP;
Dai Ohnishi, Kyoto, JP;
Takui Sakaguchi, Kyoto, JP;
Yoichi Mugino, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.