The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jan. 10, 2008
Applicants:
Chi-wen Chen, Hsin-Chu, TW;
Meng-hsiang Chang, Hsin-Chu, TW;
Inventors:
Chi-wen Chen, Hsin-Chu, TW;
Meng-hsiang Chang, Hsin-Chu, TW;
Assignee:
AU Optronics Corp., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A light sensor includes an intrinsic layer, a first ion doping area disposed one side of the intrinsic layer, a second ion doping area disposed at the other side of the intrinsic layer, an oxide insulating layer on the intrinsic layer, and a gate metal on the oxide insulating layer. The first and second ion doping areas have the same P type or N type doped ions. The intrinsic layer further includes a first light sensing region close to the first ion doping area. The first light sensing region is used for generating electron-hole pairs based on luminance of incident light.