The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jun. 23, 2009
Jae Chul OM, Seoul, KR;
Jae Chul Om, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A non-volatile memory device having a SONOS structure and a manufacturing method thereof, where a conductive layer is formed between a charge trap layer and a blocking insulation layer of the SONOS structure. Therefore, when a voltage is applied to a gate, the conductive layer undergoes voltage distributions. Accordingly, a desired voltage can be applied to the blocking insulation layer, the charge trap layer and the tunnel insulating layer by controlling the effective oxide thickness (EOT) of the blocking insulation layer and the EOT of the charge trap layer and the tunnel insulating layer. It is therefore possible to improve the erase speed of a cell.