The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Nov. 21, 2006
Jérôme Alieu, L'Isle d'Abeau, FR;
Simon Guillaumet, Vaulnaveys-le-Haut, FR;
Christophe Legendre, Allevard, FR;
Hugues Leininger, Crolles, FR;
Jean-pierre Oddou, Grenoble, FR;
Marc Vincent, Arvillard, FR;
Jérôme Alieu, L'Isle d'Abeau, FR;
Simon Guillaumet, Vaulnaveys-le-Haut, FR;
Christophe Legendre, Allevard, FR;
Hugues Leininger, Crolles, FR;
Jean-Pierre Oddou, Grenoble, FR;
Marc Vincent, Arvillard, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.