The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Feb. 02, 2009
Hisashi Masui, Santa Barbara, CA (US);
Hisashi Yamada, Ibaraki, JP;
Kenji Iso, Fujisawa, JP;
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Hisashi Masui, Santa Barbara, CA (US);
Hisashi Yamada, Ibaraki, JP;
Kenji Iso, Fujisawa, JP;
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.