The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Oct. 05, 2007
Applicant:
Yongxian Wu, Wayne, NJ (US);
Inventor:
Yongxian Wu, Wayne, NJ (US);
Assignees:
Hitachi Chemical Co., Ltd., Tokyo, JP;
Hitachi Chemical Research Center, Inc., Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.