The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Aug. 07, 2006
Tadashi Ohachi, Kyotanabe, JP;
Takashi Udagawa, Chichibu, JP;
Tadashi Ohachi, Kyotanabe, JP;
Takashi Udagawa, Chichibu, JP;
Showa Denko K.K., Tokyo, JP;
The Doshisha, Kyoto, JP;
Abstract
Provided is a semiconductor device containing a silicon single crystal substrate, a silicon carbide layerprovided on a surface of the substrate, a Group III nitride semiconductor junction layerprovided in contact with the silicon carbide layer, and a superlattice-structured layerconstituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlGaInNM(0≦X, Y, Z≦1, X+Y+Z=1, 0≦α<1, M is a Group V element except nitrogen).