The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jul. 08, 2008
Jung-dae Park, Anan-si, KR;
Young You, Hwaseong-si, KR;
Tae-hyo Choi, Yongin-si, KR;
Hun-jung Yi, Suwon-si, KR;
Kun-hyung Lee, Suwon-si, KR;
Jung-Dae Park, Anan-si, KR;
Young You, Hwaseong-si, KR;
Tae-Hyo Choi, Yongin-si, KR;
Hun-Jung Yi, Suwon-si, KR;
Kun-Hyung Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH) and a chlorine ion (Cl).