The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Mar. 21, 2008
André Ebbers, Bochum, DE;
Martin Trocha, Essen, DE;
Robert Lechner, München, DE;
Martin S. Brandt, Garching, DE;
Martin Stutzmann, Erding, DE;
Hartmut Wiggers, Reken, DE;
André Ebbers, Bochum, DE;
Martin Trocha, Essen, DE;
Robert Lechner, München, DE;
Martin S. Brandt, Garching, DE;
Martin Stutzmann, Erding, DE;
Hartmut Wiggers, Reken, DE;
Evonik Degussa GmbH, Essen, DE;
Abstract
The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10S·cmto 10 S·cm, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that