The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Aug. 15, 2007
Hong Chen, Beijing, CN;
Haiqiang Jia, Beijing, CN;
Liwei Guo, Beijing, CN;
Wenxin Wang, Beijing, CN;
Junming Zhou, Beijing, CN;
Hong Chen, Beijing, CN;
Haiqiang Jia, Beijing, CN;
Liwei Guo, Beijing, CN;
Wenxin Wang, Beijing, CN;
Junming Zhou, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Abstract
A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer () and n-type GaN layer (), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer () and InGaAlN multi-quantum well structure light emitting layer () and p-type InGaAlN layer () on sapphire or SiC substrate () in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.