The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jan. 07, 2009
Jumpei Sato, Kawasaki, JP;
Jumpei Sato, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor integrated circuit includes a boost circuit configured to boost a power supply voltage so as to generate first and second voltages, the second voltage being lower than the first voltage, a load circuit supplied with the first voltage, and a capacitor. The capacitor has first and second diffusion regions, a first insulating film formed on a channel region, a first electrode formed on the first insulating film, a second insulating film formed on the first electrode, and a second electrode formed on the second insulating film. The second voltage is applied to the first electrode. The first voltage is applied to the second electrode. The power supply voltage is applied to at least one of the first and second diffusion regions.