The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Dec. 31, 2009
Shyh-shyuan Sheu, Hsinchu County, TW;
Pei-chia Chiang, Taipei, TW;
Wen-pin Lin, Changhua County, TW;
Chih-he Lin, Yunlin County, TW;
Shyh-Shyuan Sheu, Hsinchu County, TW;
Pei-Chia Chiang, Taipei, TW;
Wen-Pin Lin, Changhua County, TW;
Chih-He Lin, Yunlin County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A voltage compensation circuit, a multi-level memory device with the same, and a voltage compensation method for reading the multi-level memory device are provided. When a memory cell is read, a reference voltage applied to the memory device is adjusted according to variation of characteristics of a drift resistance of a reference cell. The increased value of the reference voltage (i.e. a voltage difference) corresponds to a resistance variation caused by a drift condition. The drift compensation mechanism is adaptive to a compensation circuit of a read driver of the memory device, which can compensate variation of the voltage level when data is read from the memory cell. When the resistance drift occurs, a drift amount is calculated and is added to the reference voltage, in order to avoid the error in judgement caused by the resistance drift when the stored data is read out.