The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Dec. 22, 2009
Mitsutoshi Kawamoto, Otsu, JP;
Mitsutoshi Kawamoto, Otsu, JP;
Murata Manufacturing Co., Ltd., Nagaokakyo-Shi, Kyoto-Fu, JP;
Abstract
A SrTiO-based grain boundary insulation type semiconductor ceramic contains a donor element in solid solution in crystal grains, an acceptor element at least in crystal grain boundaries, an integral width of (222) face of the crystal face of 0.500° or less, and an average powder grain size of crystal grains of 1.0 μm or less. A semiconductor ceramic is obtained by firing this ceramic, and a monolithic semiconductor ceramic capacitor is obtained by using the semiconductor ceramic. The SrTiO-based grain boundary insulation type semiconductor ceramic powder has a large apparent relative dielectric constant ∈rof 5,000 or more even when the average ceramic grain size of crystal grains is 1.0 μm or less and which has an excellent insulating property. The monolithic semiconductor ceramic capacitor is capable of having a large capacity through reduction in thickness and multilayering.