The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Sep. 13, 2005
Reza Tayrani, Marina Del Rey, CA (US);
Mary A. Teshiba, Torrance, CA (US);
Reza Tayrani, Marina Del Rey, CA (US);
Mary A. Teshiba, Torrance, CA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A switching circuit. The novel switching circuit includes an active device and a first circuit for providing a reactive inductive load in shunt with the active device. In an illustrative embodiment, the first circuit is implemented using a transmission line coupled between an output of the active device and ground, in parallel with the device, to minimize the parasitic effects of the device drain to source capacitance. In a preferred embodiment, the active device includes a silicon-germanium NFET optimized for operation at high frequencies (e.g. up to 20 GHz). The optimization process includes coupling a compact, low-parasitic polysilicon resistor to a gate of the NFET to provide gate RF isolation, and designing the gate manifold, drain manifold, and drain to source spacing of the NFET for optimal high frequency operation.