The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jan. 28, 2008
Peter J. Burke, Irvine, CA (US);
Steffen Mckernan, San Clemente, CA (US);
Dawei Wang, Irvine, CA (US);
Zhen Yu, Irvine, CA (US);
Peter J. Burke, Irvine, CA (US);
Steffen McKernan, San Clemente, CA (US);
Dawei Wang, Irvine, CA (US);
Zhen Yu, Irvine, CA (US);
RF Nano Corporation, Newport Beach, CA (US);
Abstract
A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.