The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jun. 06, 2008
Masakazu Takao, Kyoto, JP;
Mitsuhiko Sakai, Kyoto, JP;
Shunji Nakata, Kyoto, JP;
Rohm Co., Ltd., , JP;
Abstract
A high luminance semiconductor light emitting device and a fabrication method for such semiconductor light emitting device are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (), a first metal buffer layer () disposed on a surface of the GaAs layer, a first metal layer () disposed on the first metal buffer layer, and a second metal buffer layer () and a second metal layer () disposed at a back side of the GaAs layer; and a light emitting diode structure disposed on the GaAs substrate structure and including a third metal layer (), a metal contact layer () disposed on the third metal layer, a p type cladding layer () disposed on the metal contact layer, a multi-quantum well layer () disposed on the p type cladding layer, an n type cladding layer () disposed on the multi-quantum well layer, and a window layer () disposed on the n type cladding layer, wherein the GaAs substrate structure and the light emitting diode structure are bonded by using the first metal layer () and the third metal layer ().