The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Aug. 12, 2008
Cheng-ju Tsai, Taipei, TW;
Bo-chu Chen, Hsinchu, TW;
Ding-kang Shih, Kaohsiung, TW;
Jung-jie Huang, Yunlin, TW;
Yung-hui Yeh, Hsinchu, TW;
Cheng-Ju Tsai, Taipei, TW;
Bo-Chu Chen, Hsinchu, TW;
Ding-Kang Shih, Kaohsiung, TW;
Jung-Jie Huang, Yunlin, TW;
Yung-Hui Yeh, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom interface of the microcrystalline active layer. The inversion layer channel is formed in the crystallized layer of the top interface of the microcrystalline active layer. As such, the present microcrystalline thin film transistor has better electrical performance and reliability.