The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2011

Filed:

Apr. 21, 2010
Applicants:

Jaeheon Shin, Daejeon, KR;

Kyung Hyun Park, Daejeon, KR;

Namje Kim, Daejeon, KR;

Sang-pil Han, Daejeon, KR;

Chul-wook Lee, Daejeon, KR;

Eundeok Sim, Daejeon, KR;

Yongsoon Baek, Daejeon, KR;

Inventors:

Jaeheon Shin, Daejeon, KR;

Kyung Hyun Park, Daejeon, KR;

Namje Kim, Daejeon, KR;

Sang-Pil Han, Daejeon, KR;

Chul-Wook Lee, Daejeon, KR;

Eundeok Sim, Daejeon, KR;

Yongsoon Baek, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are an apparatus for generating/detecting terahertz wave and a method of manufacturing the same. The apparatus includes a substrate, a photo conductive layer, a first electrode and a second electrode, and a lens. The photo conductive layer is formed on an entire surface of the substrate. The first electrode and a second electrode formed on the photo conductive layer. The first and second electrodes are spaced from each other by a certain gap. The lens is formed on the first and second electrodes. The lens is filled in the gap between the first and second electrodes.


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