The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Mar. 27, 2006
Jinsong Yin, Sunnyvale, CA (US);
Wen Yu, Fremont, CA (US);
Connie Pin-chin Wang, Menlo Park, CA (US);
Paul Besser, Sunnyvale, CA (US);
Keizaburo Yoshie, Cupertino, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Wen Yu, Fremont, CA (US);
Connie Pin-Chin Wang, Menlo Park, CA (US);
Paul Besser, Sunnyvale, CA (US);
Keizaburo Yoshie, Cupertino, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Globalfoundries Inc., Grand Cayman, KY;
Abstract
A method of forming a contact in a semiconductor device provides a titanium contact layer in a contact hole and a MOCVD-TiN barrier metal layer on the titanium contact layer. Impurities are removed from the MOCVD-TiN barrier metal layer by a plasma treatment in a nitrogen-hydrogen plasma. The time period for plasma treating the titanium nitride layer is controlled so that penetration of nitrogen into the underlying titanium contact layer is substantially prevented, preserving the titanium contact layer for subsequently forming a titanium silicide at the bottom of the contact.