The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jul. 27, 2007
Applicants:
Chung-ki Min, Yongin-si, KR;
Tae-eun Kim, Suwon-si, KR;
Byoung-moon Yoon, Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/62 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase changeable memory device is manufactured by forming at least one insulating layer on a substrate. A preliminary first electrode is formed on the insulating layer. The preliminary first electrode is partially etched to form a first electrode electrically connected to the substrate. After the preliminary first electrode is formed, both sidewalls of the preliminary first electrode are partially etched isotropically to form a first electrode having a uniform width and height. A phase changeable material layer pattern and a second electrode are subsequently formed on the first electrode. Related devices also are described.