The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2011

Filed:

Oct. 29, 2010
Applicants:

Yasuki Morino, Hyogo, JP;

Yoshihiko Kusakabe, Hyogo, JP;

Ryuichi Wakahara, Hyogo, JP;

Inventors:

Yasuki Morino, Hyogo, JP;

Yoshihiko Kusakabe, Hyogo, JP;

Ryuichi Wakahara, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8232 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.


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