The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jun. 18, 2009
Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated
Applicants:
Young-kuk Kim, Seoul, KR;
Mi-lim Park, Gyeonggi-do, KR;
Dong-ho Ahn, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Phase change memory devices may be fabricated by forming a first electrode on a substrate and forming a chalcogenide material on the first electrode. The chalcogenide material is plasma treated sufficiently to induce a plasma species throughout the chalcogenide material. A second electrode is formed on the chalcogenide material. Related devices are also described.