The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jul. 25, 2007
Gi Heon Kim, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Kyu Ha Baek, Daejeon, KR;
IN Kyu You, Daejeon, KR;
Seung Youl Kang, Daejeon, KR;
Seong Deok Ahn, Daejeon, KR;
Kyung Soo Suh, Daejeon, KR;
Gi Heon Kim, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Kyu Ha Baek, Daejeon, KR;
In Kyu You, Daejeon, KR;
Seung Youl Kang, Daejeon, KR;
Seong Deok Ahn, Daejeon, KR;
Kyung Soo Suh, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.