The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Apr. 14, 2008
Toshio Nomaguchi, Yokohama, JP;
Toshio Nomaguchi, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
To grasp a removable particle contamination and appropriately removing a particle contamination exposing from a surface of a semiconductor layer, this production method of the semiconductor optical device includes a surface treatment step in which particle contaminations removed from a surface of a cap layerby etching are limited to particle contaminations A, Chigher than the thickness of a resist layerformed on the surface of the cap layer. Therefore, the heights of removable particle contaminations can be preliminarily grasped based on the thickness of the resist layerformed, whereby the particle contaminations exposing from the surface of the cap layercan be appropriately removed by etching just enough. By repeating steps S-Swhile changing the thickness of the resist layer, it is feasible to prevent unnecessary etching of a wafer and to remove the particle contaminations more completely.