The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jul. 27, 2007
Koji Arita, Kanagawa, JP;
Ryohei Kitao, Tsuruoka, JP;
Koji Arita, Kanagawa, JP;
Ryohei Kitao, Tsuruoka, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A method of fabricating a semiconductor device of the invention includes a plating process of filling a plurality of recesses provided to an insulating film formed on a substrate with an electro-conductive material, wherein the plating process includes a process step (S) of performing the plating with a first current density which was obtained by correcting a predetermined first reference current density based on ratio of surface area Sr=S/Sof a first surface area Sover the entire surface of the substrate which includes the area of side walls of the plurality of recesses over the entire surface of the semiconductor substrate, and a second surface area Sover the entire surface of the substrate which does not include the area of side walls of the plurality of recesses, when fine recesses not larger than a predetermined width, out of all of the plurality of recesses, are filled with the electro-conductive material.