The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jul. 25, 2008
Masayuki Sakakura, Ebina, JP;
Shuhei Takahashi, Atsugi, JP;
Kazuko Ikeda, Machida, JP;
Tomoya Futamura, Atsugi, JP;
Masayuki Sakakura, Ebina, JP;
Shuhei Takahashi, Atsugi, JP;
Kazuko Ikeda, Machida, JP;
Tomoya Futamura, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer. The structure of the light emitting device and its manufacturing method reduces the amount of water remaining in the light emitting device and suppresses the deterioration of the light emitting element due to water remaining in the light emitting device.