The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jan. 28, 2008
Thomas Dudley Boone, Jr., San Jose, CA (US);
Liesl Folks, Campbell, CA (US);
Robert E. Fontana, Jr., San Jose, CA (US);
Bruce Alvin Gurney, San Jose, CA (US);
Jordan Asher Katine, Mountain View, CA (US);
Sergio Nicoletti, San Jose, CA (US);
Thomas Dudley Boone, Jr., San Jose, CA (US);
Liesl Folks, Campbell, CA (US);
Robert E. Fontana, Jr., San Jose, CA (US);
Bruce Alvin Gurney, San Jose, CA (US);
Jordan Asher Katine, Mountain View, CA (US);
Sergio Nicoletti, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.